کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547931 1512910 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a InxGa1-xAs/InP heterostructure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a InxGa1-xAs/InP heterostructure
چکیده انگلیسی
We report photoluminescence (PL) spectra of InP/InxGa1-xAs/InAs/InP dot-in-a-well structures grown by MOVPE, with different compositions of the ternary layer. Measurements with atomic force microscopy showed that the largest quantum dot (QD) height is obtained when the InAs QDs are grown on the InxGa1-xAs layer with a mismatch of 1000 ppm, and the height decreases as the mismatch departs from this value. PL spectra of the QDs showed an asymmetric band, which involves transitions between dot energy levels and can be deconvoluted into two peaks. The highest energy PL peak of this band was observed for the sample with the QDs grown on top of the lattice-matched InxGa1-xAs layer and it shifted to lower energies for strained samples as the degree of mismatch increased. Theoretical calculations of the energy levels of the entire structure were used to interpret the obtained PL spectra and determine the possible detection tunability range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 85-88
نویسندگان
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