کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547960 | 1512910 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells](/preview/png/1547960.png)
چکیده انگلیسی
Nonparabolic effective mass of conduction subbands in InGaAs/InAlAs quantum wells (QWs), lattice-matched to InP, was quantitatively obtained by analyzing interband-optical transition spectra. Thickness of InGaAs well was 5.3, 9.4, and 20.8nm. Thickness of InAlAs barrier was about 10nm, and each QW was independent. Excellent agreement was obtained between experimental mass and theoretical mass predicted by Kane's three-level band theory on bulk InGaAs, in a wide energy range of 0.5eV from the bandedge. Method of experimental analysis on a relation between eigen energy and effective mass was described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 199–202
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 199–202
نویسندگان
N. Kotera, K. Tanaka,