کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1548000 | 1512910 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Material dependence of spin transport modulated by magnetic barriers in semiconductor nano-wires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present the properties of ballistic spin transport through magnetic barrier structures in semiconductor nano-wires. The Landauer's approach is adopted to calculation of the transmission probability and the conductance for various host material nano-wires which are different remarkably from each other in effective g-factors. A host material having small effective g-factor is quantized in the conductance and the spin-dependence is disappeared in it. Nevertheless this kind of behavior is broken for the host material having large effective g-factor and the spin-dependent splitting is shown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1â2, May 2006, Pages 359-362
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1â2, May 2006, Pages 359-362
نویسندگان
Jin Woo Kim, Nammee Kim, Tae Won Kang, Gukhyung Ihm, Seung Joo Lee,