Asymmetric bilayer graphene nanoribbon MOSFETs for analog and digital electronics

• A new structure was proposed for bilayer graphene nanoribbon field-effect transistor (BGNFET).
• Analog, radiofrequency and digital characteristics of the proposed device were explored using NEGF formalism based on a precise tight-binding model.
• The comparison with graphene nanoribbon FET (GNRFET) showed that the BGNFET in asymmetric bias mode benefited from better intrinsic voltage gain, cut-off frequency, switching-delay, and on-off current ratio.

In this paper, a new structure was proposed for bilayer graphene nanoribbon field-effect transistor (BGNFET) mainly to enhance the electrical characteristics in analog and digital applications. The proposed device uses two metallic gates on the top and bottom of a bilayer graphene nanoribbon, which is surrounded by SiO2 and connected to heavily doped source/drain contacts. Electrical properties of the proposed device were explored using fully self-consistent solution of Poisson and Schrödinger equations based on the nonequilibrium Green's function (NEGF) formalism. Significant improvements in the electrical behavior was seen in the simulation results for gates asymmetrically biased. The comparison with graphene nanoribbon FET showed that the proposed structure benefited from higher intrinsic voltage gain and cut-off frequency and improved switching characteristics such as delay and Ion/Ioff ratio.