Dynamic electrical conduction in p-type CuIn3Se5

In this work, ac electrical conductivity measurements were studied for the first time in p type bulk ternary semiconductor compound CuIn3Se5. The dynamic electrical conductivity is analyzed in the frequency range 20 Hz to 1 MHz and temperature from 308 K to 500 K. The relaxation times for the grain and grain boundaries were studied from the second derivative of electric modulus versus frequency at various temperatures. The relaxation time is found to decrease with increasing temperature and to obey the Arrhenius relationship. The values of activation energies for conduction and relaxation times are obtained.