Novel δ-doped partially insulated junctionless transistor for mixed signal integrated circuits

• In this paper, a novel δ-doped partially insulated junctionless transistor (δ-Pi-OXJLT) has been proposed. Employing highly doped δ-region below the channel not only reduces the off-state leakage current and short channel effects (SCEs) but also reduces the requirements of scaling buried oxide thickness and channel thickness. Further, the comparative analysis of digital and analog circuit performance of proposed δ-Pi-OXJLT, bulk planar (BP) JLT and silicon-on-insulator (SOI) JLT has been carried out. It has been found that, the proposed δ-Pi-OXJLT shows significant reduction in IOFF, DIBL and SS over BPJLT and SOIJLT devices. Further, ION and ION/IOFF in the case of proposed δ-Pi-OXJLT also improves over the BPJLT device. In addition, the improvement in analog figures of merit, GM, GM/IDS, GMRO and fT in the case of proposed δ-Pi-OXJLT shows that the proposed δ-Pi-OXJLT is the promising device for mixed signal integrated circuits.

In this paper, δ-doped partially insulated junctionless transistor (δ-Pi-OXJLT) has been proposed which shows that, employing highly doped δ-region below the channel not only reduces the off-state leakage current (IOFF) and short channel effects (SCEs) but also reduce the requirements of scaling channel thickness of junctionless transistor (JLT). The comparative analysis of digital and analog circuit performance of proposed δ-Pi-OXJLT, bulk planar (BP) JLT and silicon-on-insulator (SOI) JLT has also been carried out. The digital parameters analyzed in this work are, on-state drive current (ION), IOFF, ION/IOFF ratio, static power dissipation (PSTAT) whereas the analog parameters analyzed includes, transconductance (GM), transconductance generation factor (GM/IDS), intrinsic gain (GMRO) and cut-off frequency (fT) of the devices. In addition, scaling behavior of the devices is studied for various channel lengths by using the parameters such as drain induced barrier lowering (DIBL) and sub-threshold swing (SS). It has been found that, the proposed δ-Pi-OXJLT shows significant reduction in IOFF, DIBL and SS over BPJLT and SOIJLT devices. Further, ION and ION/IOFF ratio in the case of proposed δ-Pi-OXJLT also improves over the BPJLT device. Furthermore, the improvement in analog figures of merit, GM, GM/IDS, GMRO and fT in the case of proposed δ-Pi-OXJLT clearly shows that the proposed δ-Pi-OXJLT is the promising device for mixed signal integrated circuits.