Structural and optical properties of Zn-doped SnO2 films prepared by DC and RF magnetron co-sputtering

• Zn-doped SnO2 (SnO2:Zn) thin films with different Zn-doping concentration.
• Two PL peaks related to Zn-doping were detected.
• Optical and structural properties are affected by dopant concentration.

In the present work, the Zn-doped SnO2 (SnO2:Zn) thin films, with different Zn-doping concentration, were successfully prepared on Si (100) and glass substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The effects of dopant concentration, determined by the sputtering power applied on Zn target, on the structural, photoluminescent and optical performances of Zn-doped SnO2 films were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), energy dispersive X-ray (EDX),high-resolution transmission electron microscopy(HRTEM) and Ultraviolet–Visible-Near IR spectroscopy. The results show all these films exhibited excellent crystalline quality with tetragonal rutile structure. Two photoluminescence (PL) peaks related to Zn-doping were detected at about 351 nm (3.53 eV) and 369 nm (3.36 eV). Moreover, the average transmittance and the band gap energy of the films continuously decreased from 85% to 75% and from 3.52 eV to 3.34 eV, respectively, with the increase of the doping level. The excellent properties of Zn-doped SnO2 films make them capable for wider applications.

High crystalline quality Zn-doped SnO2 (SnO2:Zn) thin films, with different Zn-doping concentration, were successfully prepared on Si (100) and glass subtrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The XRD and SAED patterns of undoped and Zn-doped SnO2 films show that all the films are of high crystalline quality with tetragonal rutile structure of SnO2. No phase corresponding to zinc or other zinc compound has been observed in the XRD patterns, indicating that Zn atoms get incorporated into the SnO2 lattice, which is consistent with EDS analysis. The blue shift in the (110) peak occurs in the XRD pattern, when Zn target power is over 40 W, is due to the incorporation of Zn atoms. And the effects of dopant concentration on the morphological, photoluminescent and optical performances of Zn-doped SnO2 films were also further investigated in detail.Figure optionsDownload as PowerPoint slide