Study of Nitrogen terminated doped zigzag GNR FET exhibiting negative differential resistance

• We have studied Gallium and Aluminum doped Nitrogen terminated zigzag GNRFET with high-k dielectric using DFT based Quantumwise ATK for getting accurate results.
• The negative differential resistance and band gap opening in the doped Graphene has explained using the Bloch functions for VBM and CBM along with the projected density of states.
• The Aluminum doped Nitrogen terminated zigzag GNRFET provides better peak to valley drain current ratio (IP/IV = 10.2) compared to Boron doped GNRFET [13].

This paper presents the study of Gallium and Aluminum doped Nitrogen terminated zigzag Graphene Nano Ribbon (GNR) FET with high-k dielectric. The GNR FET structure has been designed and simulated using Quantumwise Atomistix Toolkit software package. The presented GNR FET with n-type (Nitrogen doped) electrodes and p-type (Gallium or Aluminum doped) scattering region are simulated and analyzed using Density Functional Theory combined with NEGF formalism and Device Density of States (DDOS). The device shows a negative differential resistance phenomenon which can be controlled by the gate of the zigzag GNR FET. It is found that doping of Gallium and Aluminum in scattering region provides higher drain current, higher ION/IOFF and IP/IV ratios as compared to that of Boron doped zigzag GNR FET. The potential applications of the device are in logical, high frequency, and memory devices.

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