کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553037 | 1513216 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved performance of 4H-SiC MESFETs with Î-gate and recessed p-buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
An improved 4H-SiC MESFET with Î-gate and recessed p-buffer layer (ÎRP-MESFET) is proposed in this paper. The channel electric field and the gate depletion layer have been modulated by utilizing Î-gate and introducing recessed p-buffer layer simultaneously in the ÎRP-MESFET structure. The simulated results show that the drain saturation current and the breakdown voltage of the proposed structure are about 18.5% and 19.4% larger than those of the double recessed structure (DR-MESFET), respectively. Therefore, the maximum output power density of 8.17Â W/mm can be achieved, which is about 42% higher than that of the reported one. The cut-off frequency (fT) of the proposed structure is 19.8Â GHz, which is higher than that of the conventional structure due to its smaller gate-source capacitance (Cgs).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 85, September 2015, Pages 551-556
Journal: Superlattices and Microstructures - Volume 85, September 2015, Pages 551-556
نویسندگان
Hujun Jia, Hang Zhang, Ding Xing, Peimiao Ma,