Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns

We report the growth of semipolar InGaN/GaN multiple quantum wells (MQWs) on GaN microfacet structures which are formed by selective area epitaxy on a template masked with SiO2 crossover stripe patterns. The well defined shapes are comprised of planar (0 0 0 1) surface on top, smooth {1 1 −2 2} and {1 −1 0 1} microfacets on sidewalls. The different microfacets exhibit different emission properties which are attributed to variations in growth rate and indium incorporation on different microfacets under the same growth conditions. Furthermore, the emission peak of MQWs on {1 1 −2 2} microfacets exhibits a redshift which is due to the lateral vapor diffusion and surface migration.