Superlattice structure modelling and simulation of high electron mobility transistor with novel device structure

• Two dimensional electron gas transports makes better conductivity.
• Magnetic moment in the magnetic tunnel junctions helps in faster electron transport.
• Conductivity of the device is very high when compared to the existing device structure.

High electron mobility transistor (HEMT) made of CNT channel with magnetic tunnel junctions inserted on both the sides of the channel region before source and drain region is analysed in this paper. The conductivity of the proposed superlattice structure with magnetic tunnel junction is very good when compared to superlattice structure without the magnetic tunnel junction. When fabricated as a HEMT the device will serve exceedingly well for various applications in electronics.

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