A three-dimensional (3D) analytical model for subthreshold characteristics of uniformly doped FinFET

• Analytical model for subthreshold characteristics of doped FinFET has been presented.
• Separation of variables technique is used for determination of the 3D channel potential.
• ATLAS™ simulation data is used for the verification of theoretical results.
• Theoretical results are in good agreement with simulation results.

In this paper, three dimensional (3D) analytical model for subthreshold characteristics of doped FinFET has been presented. The separation of variables technique is used to solve the 3D Poisson’s equation analytically with appropriate boundary conditions so as to obtain the expression for channel potential. The thus obtained potential distribution function has been employed in deriving subthreshold current and subthreshold slope model. The channel potential characteristics have been studied as a function of various device parameters such as gate length, gate oxide thickness and channel doping. The proposed analytical model results have been validated by comparing with the simulation data obtained by the 3D device simulator ATLAS™ from Silvaco.