کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553303 | 1513228 | 2014 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties study of InxGa1âxAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Optical properties of InxGa1âxAs films grown on GaAs substrates by metalorganic vapor phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at room temperature and near-infrared photoluminescence (PL) at 10Â K were performed. SR signals in the range of 200-1700Â nm provided the x-dependence of the critical point energies E1, E1Â +Â Î1 and E2. Furthermore, band-gap and spin-orbit splitting energies, as well as their broadening parameters were determined from PR spectra and studied as function of In composition ranging from 0 to 0.37. On the other hand, the origins of luminescence bands observed in PL spectra were revealed. A redshift of 16Â meV/%In in the band-to-band transition was obtained. All results issued from different characterizations tools are correlated and compared to the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 73, September 2014, Pages 71-81
Journal: Superlattices and Microstructures - Volume 73, September 2014, Pages 71-81
نویسندگان
M.M. Habchi, M. Bedoui, N. Tounsi, I. Zaied, A. Rebey, B. El Jani,