Calculation of current density for triangular multi-barrier structure in a constant electric field

• The current density expression for one-dimensional triangular multi-barrier structure in the presence of a constant electric field has been derived.
• The relationship between the resonance transmission coefficient and the bias voltage have been analyzed.
• The influence of temperature, the width of the barrier and the height of the barrier on the curves of current density–voltage have been analyzed.

In this paper, the current density expression for one-dimensional triangular multi-barrier structure in the presence of a constant electric field has been derived. For a selected range of parameters of semiconductor materials, the characteristics of the current density versus the applied voltage have been calculated in numerical methods, and the influence of temperature, the width of the barrier and the height of the barrier on the curves of current density–voltage have been also analyzed.