Raman gain in a Boron based Group-III nitride quantum well

• Electron Raman scattering of a hydrogenic impurity is studied in a BxGa1−xN/BN coupled quantum well.
• Intersubband scattering rates, in a Boron based wide band gap GaN, are considered.
• BxGa1−xN semiconductor is taken as inner quantum well and BN material is taken as barrier material.
• The binding energy is obtained for various impurity position and the Boron alloy content in BxGa1−xN quantum well.

Electron Raman scattering of a hydrogenic impurity is studied using exact diagonalization method in a BxGa1−xN/BN coupled quantum well. Intersubband scattering rates, in a Boron based wide band gap GaN, are considered. BxGa1−xN semiconductor is taken as inner quantum well and BN material is taken as barrier material. The effect of quantum confinement on the differential cross section of Raman scattering, with and without the impurity, is obtained. The built-in internal electric field is included throughout the calculations. The third order susceptibility with the incident photon energy is calculated with and without doping impurity. The donor hydrogenic binding energy and its low lying excited states are computed taking into account the geometrical confinement. The binding energy is obtained for various impurity position and the Boron alloy content in BxGa1−xN quantum well. It is brought out that the geometrical confinement and built-in internal electric fields have great influence on the optical properties of the semiconductor.