Intense laser field effects on exciton states in direct-gap Ge/SiGe quantum well

Based on the effective mass approximation, the laser field effects on exciton states and optical properties in the direct-gap Ge/SiGe quantum well (QW) are investigated by means of a variational method. Numerical results show that the ground-state exciton binding energy and the emission energy are dependent highly on the well width and laser field amplitude in the direct-gap Ge/SiGe QW. The laser field decreases the exciton binding energy, however, it also increases the emission energy in the QW for any well width. In particularly, our results also show that the laser field has remarkable effects on exciton states and optical properties in the direct-gap Ge/SiGe QW with the small well width case.

• The laser field decreases the exciton binding energy in the direct-gap Ge/SiGe QW.
• The laser field increase the interband transition energy in the direct-gap Ge/SiGe QW.
• The laser field effects are obvious on optical properties in the QW with the small well width.