Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices

► Comparison and advantages of this material over other HEMT devices with reference. ► Detailed analysis of AlInGaN/AlN/GaN HEMT with experimental dimensions from [27-29]. ► Model for polarization and drain current model. ► Small signal parameters are derived and compared with TCAD and EXP. using Unity gain method. ► It gives DC and RF plot data with experimental compared results.