Atomic force microscopy investigation of surface roughness generated between SiO2 micro-pits in CHF3/Ar plasma

► Nano-masking effect in the SiO2 etching process leaded to surface roughness. ► Self-organized nano-particles from etched product increase the surface roughness. ► Surface roughness below 1 nm is achieved by decreasing the RF power and pressure. ► The pressure and RF power have a direct effect on surface roughness generated by RIE.