Bias-controllable spin beam splitter based on antiparallel double δδ-magnetic-barrier nanostructure

We investigate Goos–Hänchen (GH) effect of spin beams in antiparallel double δδ-magnetic-barrier (MB) nanostructure under an applied bias, which can be experimentally realized by depositing two metallic ferromagnetic (FM) stripes on top and bottom of the semiconductor heterostructure. GH shifts for spin beams accross this device, is numerically calculated, with the help of the stationary phase method. It is shown that a sizable spin polarization of GH shifts still exists in this device under an applied bias. It also is shown that both magnitude and sign of spin polarization of GH shifts can be controlled by adjusting the applied bias. These interesting properties may provide an effective approach to spin injection, and this device can be used as a bias-controllable spin beam splitter.

► Spin-dependent GH effect of electron beams in a MB nanostructure under a bias is studied.
► A considerable spin polarization effect is found in the device.
► Spin polarization of GH shift is tuned by an applied bias.
► A bias-controllable spin beam splitter is achieved.