A study of the effect of spatial electric field on the binding energy and polarization of a donor impurity in a GaAs/AlAs tetragonal quantum dot (TQD)

In this work, the effects of spatial electric field and ratios of dot edge lengths (Lz/L) on the binding energy and polarization of a donor impurity in TQD are presented. Calculations are performed within the effective-mass approximation using the variational procedure and considering an infinite confining potential on all surfaces of the system. The binding energy and polarization are calculated as a function of (Lz/L) ratio. It is found that binding energy and polarization of a donor impurity in TQD depend strongly on the Lz/L ratio, applied spatial electric field strength and impurity position.

The difference of the polarization in TQD is presented as a function of Lz/L ratio for different values of electric field strength and impurity position.Figure optionsDownload as PowerPoint slideHighlights
► The binding energy and polarization of a donor impurity are investigated.
► Calculations are performed in GaAs/AlAs tetragonal quantum dot.
► Binding energy and polarization of a donor impurity in TQD are discussed.