Fluctuating in the hopping rate of CuO thin films with respect to substrate temperature

Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions.

► CuO thin films are deposited by d.c. magnetron sputtering technique.
► The electrical transport properties of the films are investigated.
► The multi-phonon hopping conduction mechanism controls carrier transport.
► The hopping rate changes with increasing substrate temperature.