کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554039 998766 2012 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon
چکیده انگلیسی

We report the optical study of a lambda-thick GaN microcavity grown by molecular beam epitaxy on a silicon substrate. Angle-resolved reflectivity measurements evidence the strong coupling regime at room temperature on the half cavity (without the top mirror), but at low temperature, the high excitonic absorption quenches the optical cavity mode at the excitonic energies. On the whole microcavity, the improved quality factor leads to the observation of the polariton emission whatever the temperature. No bottleneck is observed at 70 K even at low pumping power and large negative detuning. The impact of the optical confinement and the excitonic absorption, studied through reflectivity measurements are accurately reproduced by the transfer-matrix formalism. The optimization of the design in this structure leads to a large Rabi splitting (52 meV) at room temperature.


► High excitonic absorption vanishes the cavity effect.
► The improvement of the quality factor overcomes this inhibition.
► No bottleneck even with short photonic lifetime (0.05 ps).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 52, Issue 3, September 2012, Pages 541–551
نویسندگان
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