A novel double-recessed 4H-SiC MESFET with partly undoped space region

In this paper, a novel double-recessed 4H-SiC metal semiconductor field effect transistor (MESFET) with partly undoped space region (DRUS-MESFET) is introduced. The key idea in this work is to improve the DC and RF characteristics of the device by introducing an undoped space region. Using two-dimensional and two-carrier device simulation, we demonstrate that breakdown voltage (VBR) increases from 109 V in conventional double recessed MESFET (DR-MESFET) structure to 144.5 V in the DRUS-MESFET structure due to the modified channel electric field distribution of the proposed structure. The maximum output power density of the DRUS-MESFET structure is about 25.4% larger than that of the DR-MESFET structure. Furthermore, lower gate–drain capacitance (CGD), higher cut-off frequency (fT), larger maximum available gain (MAG), and higher maximum oscillation frequency (fmax) are achieved for the DRUS-MESFET structure. The results show that the fmax and fT of the proposed structure improve 95.6% and 13.07% respectively, compared with that of the DR-MESFET structure. Also, the MAG of the DRUS-MESET is 4.5 dB higher than that of the DR-MESFET structure at 40 GHz. The results show that the DRUS-MESFET structure has superior electrical characteristics and performances in comparison with the DR-MESFET structure.

► A double-recessed 4H-SiC metal–semiconductor field effect transistor is introduced.
► The key idea is to improve the device characteristics by an undoped space region.
► Breakdown voltage of device increases due to more monotonous channel electric field.
► The structure has superior performances in comparison with conventional structures.