Quaternary n-Al0.08In0.08Ga0.84N/p-Si-based solar cell

► New structure of quaternary-nitrides Al0.08In0.08Ga0.84N on p-Si as solar cells was fabricated. ► Good light trapping and absorption of an incident light over a wide wavelength spectrum is observed. ► Piezoelectric effect inside the quaternary-nitrides Al0.08In0.08Ga0.84N coating is employed. ► A solar cell with reasonable conversion efficiency of 9.74% has been obtained.