کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554148 998772 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Excitonic optical absorption in wurtzite InGaN/GaN quantum wells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Excitonic optical absorption in wurtzite InGaN/GaN quantum wells
چکیده انگلیسی

Within the framework of the effective-mass and envelope function theory, exciton states and optical properties in wurtzite (WZ) InGaN/GaN quantum wells (QWs) are investigated theoretically considering the built-in electric field effects. Numerical results show that the built-in electric field, well width and in composition have obvious influences on exciton states and optical properties in WZ InGaN/GaN QWs. The built-in electric field caused by polarizations leads to a remarkable reduction of the ground-state exciton binding energy, the interband transition energy and the integrated absorption probability in WZ InGaN/GaN QWs with any well width and In composition. In particular, the integrated absorption probability is zero in WZ InGaN/GaN QWs with any In composition and well width L > 4 nm. In addition, the competition effects between quantum confinement and the built-in electric field (between quantum size and the built-in electric field) on exciton states and optical properties have also been investigated.


► In composition effects on optical absorption are obvious in InGaN QWs with small well width.
► The integrated absorption probability is zero when well width L > 4 nm for any In composition.
► The competition effects between quantum confinement and the built-in electric field are also investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 51, Issue 1, January 2012, Pages 9–15
نویسندگان
, , ,