The preferential formation site of dislocations in InAs/GaAs quantum dots

In this paper, taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of the pure edge and 60° mixed dislocation segment in different shaped InAs/GaAs quantum dots (QDs). From the result, it is clear that for the pure edge dislocations the most energy favorable position is always the base center of the quantum dots. While as to the 60° mixed dislocations, the positions near to the edge of the quantum dot base are the energy favorable area and the exact position is changed with different aspect ratio of the quantum dot.

► We use a dislocation position dependent model to calculate the preferential formation site of dislocation segment.
► We use the non-singular, self-consistent formulas for stress field of dislocation segment as the initial stress tensor.
► Based on finite element method, we calculate both pure edge dislocation and 60° mixed dislocation.