کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554188 998774 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires
چکیده انگلیسی

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InxGa1−x  N/GaN cylindrical quantum well wires (CQWWs) is investigated using variational procedures. Numerical results show that the ground-state donor binding energy EbEb is highly dependent on the impurity position and the CQWWs structure parameters. The donor binding energy for a shallow donor impurity located at the center of the CQWWs is the largest. As the impurity position changes from the center of the wire to its edge, the donor binding energy gets smaller. Also, we have found that In concentration is a very important value to tailor the system, since the binding energies close to binding energy maxima are strongly dependent on In content.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 49, Issue 5, May 2011, Pages 497–503
نویسندگان
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