Strain in GaAsSb quantum well studied by X-ray diffraction and Rutherford backscattering/channeling

The strain state of a GaAs1−xSbx/GaAs single quantum well (SQW) was studied using high resolution X-ray diffraction (HR-XRD) and Rutherford backscattering/channeling (RBS/C). The results reveal that the GaAsSb quantum well has good crystalline quality and the Sb content x of the GaAsSb layer is 0.36. The 7.3 nm GaAs0.64Sb0.36 layer is highly strained with a perpendicular elastic strain of 2.0% and a degree of relaxation of 0.23. Photoluminescence (PL) measurement at room temperature presents a peak at 0.995 eV (1.224 μm) with a linewidth of 67 meV, revealing the optical properties of the GaAsSb SQW.