Hydrostatic pressure effect on the electrical properties of Al/conducting polymer (P3DMTPT)/p-Si/Al structure

► The forward bias I-V characteristics of the conducting polymer P3DMTPT interfaced to the p-Si have been explained by using the space-charge-limited current density model dominated by an exponential distribution of traps at high voltages. ►Φb and diode quality of the Al/P3DMTPT/p-Si/Al structure are enhanced by using the hydrostatic pressure. ► The interface state density Nss under different hydrostatic pressure displays an exponential rise with bias from the midgap towards the bottom of the conduction band. ► The Nss decreases with the increasing hydrostatic pressure due to decreasing ideality factor.