کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554201 998775 2011 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrostatic pressure effect on the electrical properties of Al/conducting polymer (P3DMTPT)/p-Si/Al structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Hydrostatic pressure effect on the electrical properties of Al/conducting polymer (P3DMTPT)/p-Si/Al structure
چکیده انگلیسی
► The forward bias I-V characteristics of the conducting polymer P3DMTPT interfaced to the p-Si have been explained by using the space-charge-limited current density model dominated by an exponential distribution of traps at high voltages. ►Φb and diode quality of the Al/P3DMTPT/p-Si/Al structure are enhanced by using the hydrostatic pressure. ► The interface state density Nss under different hydrostatic pressure displays an exponential rise with bias from the midgap towards the bottom of the conduction band. ► The Nss decreases with the increasing hydrostatic pressure due to decreasing ideality factor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 49, Issue 2, February 2011, Pages 124-131
نویسندگان
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