کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554219 | 998776 | 2011 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of intense laser field on the Electronic Raman Scattering of shallow donor impurities in quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The laser-field dependence of energy levels and donor-related Electronic Raman Scattering is investigated by a quasi-analytical approach. The differential cross section involved in this process is calculated as a function of secondary radiation photon energy. We find that the laser field amplitude and confinement strength have an important influence on the Raman scattering. And the transitions between lower electronic energy states are more sensitive to the laser field.
► The Donor-related Raman scattering is investigated by a quasi-analytical approach.
► The emission spectra is increased obviously with increasing the laser field.
► Raman scattering is pronounced for transitions between lower energy states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 50, Issue 5, November 2011, Pages 501–510
Journal: Superlattices and Microstructures - Volume 50, Issue 5, November 2011, Pages 501–510
نویسندگان
Liangliang Lu, Wenfang Xie, Hassan Hassanabadi, Qinghu Zhong,