کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554341 1513250 2009 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
XPS and STM study of Mn incorporation on the GaAs(001) surface
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
XPS and STM study of Mn incorporation on the GaAs(001) surface
چکیده انگلیسی

The study of the early stage of Mn growth on GaAs(001)-c  (4××4) surface has been performed by in situ Scanning Tunneling Microscopy and X-ray Photoelectron Spectroscopy. Starting from GaAs(001) grown by molecular beam epitaxy, the surface was investigated after Mn deposition and after low temperature annealing at about 250 ∘C. The aim of this work is to understand the mechanism of Mn–As interaction and the behavior of Mn on the GaAs(001) substrate. The results demonstrate the high reactivity and mobility of Mn with the formation of compounds such as Mn subarsenide (MnAsx), MnAs (confirmed by STM results) and, probably, GaMnAs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 46, Issues 1–2, July–August 2009, Pages 258–265
نویسندگان
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