کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554351 | 1513250 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-assembly of Ge quantum dots on Silicon: An example of controlled nanomanufacturing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, vicinal Si(001) surfaces and oxidized Si substrates. Control of one- and two-dimensional ordering of the islands was obtained combining top-down patterning techniques (Focused Ion Beam milling), naturally occurring instabilities and anisotropies typical of Si surfaces. Real-time study of growth kinetics and self-organization of the islands has been accomplished using Scanning Tunnelling Microscopy imaging in UHV. A software routine was used to analyze the in-plane ordering of the islands on selected images. We focused on the study of the first nucleation stages of the dots on high-miscut vicinal Si(001) surfaces, in an attempt to correlate the observed behavior with the properties of these surfaces. The relevance of this research to quantum-dots based technology is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 46, Issues 1â2, JulyâAugust 2009, Pages 318-323
Journal: Superlattices and Microstructures - Volume 46, Issues 1â2, JulyâAugust 2009, Pages 318-323
نویسندگان
M. Bernardi, A. Sgarlata, M. Fanfoni, L. Persichetti, N. Motta, A. Balzarotti,