کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554365 | 998782 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Composition of the “GaAs” quantum dot, grown by droplet epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Composition of the “GaAs” quantum dot, grown by droplet epitaxy Composition of the “GaAs” quantum dot, grown by droplet epitaxy](/preview/png/1554365.png)
چکیده انگلیسی
Self-assembled strain-free quantum dot (QD) structures were grown on AlGaAs surface by the droplet epitaxal method. The QDs were developed from pure Ga droplets under As pressure. The QDs were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both techniques show that the QDs are very uniform in size and their distribution on the surface is also homogeneous. The high resolution cross-sectional TEM investigation shows perfect lattice matching between the QD and the substrate, and also the faceting of the side walls of QD can be identified exactly by lattice planes. Analytical TEM (elemental mapping by EELS) unambiguously identifies the presence of Al in the QD.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 48, Issue 4, October 2010, Pages 351–357
Journal: Superlattices and Microstructures - Volume 48, Issue 4, October 2010, Pages 351–357
نویسندگان
Á. Nemcsics, L. Tóth, L. Dobos, Ch. Heyn, A. Stemmann, A. Schramm, H. Welsch, W. Hansen,