Influence of temperature and polaron effects on the effective potential of exciton in semiconductor quantum dots

Influence of the temperature and polaron effects on the effective potential of the weak-coupling exciton in semiconductor quantum dots is studied based on the Lee-Low-Pines-Huybrechts variational method. Numerical calculations for a GaAs quantum dot, as an example, are performed. The results indicate that the effective potential of the exciton will increase with increasing electron-hole distance. It is found that the polaron effects are helpful to the stability of the light-hole exciton, but unfavorable to the stability of the heavy-hole exciton; the increase of the temperature does not favor the stability of the light-hole exciton, but is helpful to the stability of the heavy-hole exciton. Only on the condition T>93.5K, is the influence of temperature on the state of the exciton obvious.