کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554427 998786 2010 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs
چکیده انگلیسی

High electrostatic discharge (ESD) protection of GaN-based light-emitting diodes (LEDs) has been developed using a metal–oxide semiconductor (MOS) capacitor. This structure is realized by adopting various metal electrode patterns. The MOS capacitor can be implemented by extending the metal line directly from the p-type electrode to the top surface of an SiO2-capped n-GaN layer near the vicinity of the n-type electrode. By connecting a MOS capacitor in parallel with the GaN-based LED, the negative ESD strike could be significantly increased from 385 to 1075 V of human body mode (HBM).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 48, Issue 1, July 2010, Pages 23–30
نویسندگان
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