Effects of screening of the interaction potential on the mobility characteristics of degenerate surface layers in compound semiconductors at low lattice temperatures

The rates of scattering of the conduction electrons in degenerate two-dimensional electron gas in the surface of compound semiconductors at low lattice temperatures have been obtained for interaction with the piezoelectric and deformation potential acoustic phonons, under different prevailing conditions. The calculations have been carried out taking due account of the screening of the interaction potential at low temperatures where again the phonon energy cannot be neglected in comparison to the average thermal energy of the electrons and, as a result, the equipartition approximation for the phonon distribution can hardly be valid. The scattering rates thus obtained for inversion layers in GaAs and ZnO are found to depend upon the carrier energy, the lattice temperature and the level of degeneracy in quite involved manners, which are very different from what follows if one makes the simplifying approximation of negligible phonon energy or disregards the effects of screening. The mobility characteristics are then obtained using these scattering rates. The results show how the screening of the interaction potential and the finite energy of the intravalley acoustic and piezoelectric phonons significantly change the mobility characteristics of the degenerate surface layers at low lattice temperatures. The inadequacies of the present theory are pointed out and recommendations for possible refinements are discussed.