کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1554488 | 998790 | 2010 | 7 صفحه PDF | دانلود رایگان |
We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 ∘C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 \circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi2 phases, while NiCo full samples give NiSi and Ni1−xCoxSi2 phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57%, 72%, and 81%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide.
Journal: Superlattices and Microstructures - Volume 47, Issue 2, February 2010, Pages 259–265