Recombination at the interface between a metallic precipitate and a semiconductor matrix: Application to the electron-beam-induced-current contrast

A self-consistent calculation of the barrier height and of the effective recombination velocity at the interface between a metallic precipitate and a semiconductor matrix has been performed within the Read-Hall-Schockley framework. The recombination has been investigated for Si, Ge and GaAs. The precipitate size has a dramatic effect on recombination due to the enhancement of the surface charge density on the metallic precipitate when the size decreases. The electron beam induced current (EBIC) contrast of metallic precipitate has been investigated.