Improved linearity performance of AlGaN/GaN MISHFET over conventional HFETs: An optimization study for wireless infrastructure applications

In this work an extensive study on the linearity distortion behaviour of AlGaN/GaN MISHFET is performed and compared with those of conventional HFET structures. The contribution of higher order terms in a Taylor series expansion of small signal drain current is considered by evaluating higher order transconductance coefficients. Linearity figures of merit such as input intercept power, intermodulation distortion and other higher order harmonics have been investigated for both the structures. The impact of gate biasing on the linearity is also examined. The influence of critical technology parameters such as gate length, doping density, dopant layer thickness and gate insulator thickness is investigated to optimize the MISHFET structure for better linearity characteristics. Improved linearity performance has been observed for insulated gate structure proving its superiority over conventional HFETs for RF wireless and low noise applications. The results obtained reveal that by careful optimization of technology parameters, a suitably designed MISHFET architecture is more linear than its conventional counterparts.