Hydrostatic pressure effects on impurity states in GaAs/AlAs quantum wells

Within the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first derivative of the binding energy and energy shift is reliable parameter for describing the structure.

► Hydrostatic pressure effects on the impurity states of GaAs/AlAs quantum wells are investigated.
► Energy eigenvalues of the system are obviously effected by the applied hydrostatic pressure.
► Impurity states depend on the well size.