کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554866 1513253 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theory of the excitonic Mott transition in quasi-two-dimensional systems
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Theory of the excitonic Mott transition in quasi-two-dimensional systems
چکیده انگلیسی

The excitonic Mott transition in single and double quantum wells is studied using the Green’s function technique. An abrupt jump in the value of the ionization degree, which happens with an increase of the carrier density or temperature, is found in a certain density–temperature region. The opposite effect–the collapse of the electron–hole plasma into an insulating exciton system–is predicted to occur at lower densities. The critical density of the Mott transition for spatially indirect excitons may be much smaller than that for direct excitons.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issues 5–6, May–June 2008, Pages 460–464
نویسندگان
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