کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555014 1513252 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
InAs/AlGaAs QDs for intersubband devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
InAs/AlGaAs QDs for intersubband devices
چکیده انگلیسی
InAs quantum dots were grown on AlxGa1−xAs surfaces with varying Al concentrations. Atomic force microscopy measurements conducted on surface quantum dots showed that surfaces with higher Al concentrations produce smaller dots compared to GaAs surfaces. Photoluminescence measurements performed on buried quantum dots showed a blue shift and spectral broadening of the luminescence signal for increasing Al concentrations. For Al concentrations of 45% quantum dots with ground state energies above the GaAs bandgap could be achieved. High resolution transmission electron microscopy measurements clearly showed the presence of the dots and were in good agreement with the AFM measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 44, Issues 4–5, October–November 2008, Pages 411-415
نویسندگان
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