Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets

The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and AlAs surfaces has been assessed. A simple one-dimensional model agrees with the experimental results, and explains the strong migration behavior of In(As) towards (110) AlAs stripes.