کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555057 998826 2006 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects
چکیده انگلیسی

Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm. We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 39, Issue 5, May 2006, Pages 395–405
نویسندگان
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