کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555117 | 1513254 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of nitrogen-doped ZnO thin films grown by plasma-assisted pulsed laser deposition on sapphire substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The crystalline, optical and electrical properties of N-doped ZnO thin films were measured using X-ray diffraction, photoluminescence and Hall effect apparatus, respectively. The samples were grown using pulsed laser deposition on sapphire substrates coated priorly with ZnO buffer layers. For the purpose of acceptor doping, an electron cyclotron resonance (ECR) plasma source operated as a low-energy ion source was used for nitrogen incorporation in the samples. The X-ray diffraction analyses indicated some deterioration of the ZnO thin film with nitrogen incorporation. Temperature-dependent Van der Pauw measurements showed consistent p-type behavior over the measured temperature range of 200-450 K, with typical room temperature hole concentrations and mobilities of 5Ã1015Â cmâ3 and 7Â cm2/VÂ s, respectively. Low temperature photoluminescence spectra consisted of a broad emission band centered around 3.2Â eV. This emission is characterized by the absence of the green deep-defect band and the presence of a band around 3.32Â eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 42, Issues 1â6, JulyâDecember 2007, Pages 21-25
Journal: Superlattices and Microstructures - Volume 42, Issues 1â6, JulyâDecember 2007, Pages 21-25
نویسندگان
S. Chakrabarti, B. Doggett, R. O'Haire, E. McGlynn, M.O. Henry, A. Meaney, J.-P. Mosnier,