کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555209 | 1513257 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural properties of 10 μm thick InN grown on sapphire (0001)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The structural properties of a 10 μm thick In-face InN film, grown on Al2O3 (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55Ã1010 cmâ2, 4.82Ã108 cmâ2 and 1.69Ã109 cmâ2 for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35Ã109 cmâ2 and 1.20Ã109 cmâ2, respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2Ã109 cmâ2, in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 40, Issues 4â6, OctoberâDecember 2006, Pages 246-252
Journal: Superlattices and Microstructures - Volume 40, Issues 4â6, OctoberâDecember 2006, Pages 246-252
نویسندگان
E. Dimakis, J.Z. Domagala, A. Delimitis, Ph. Komninou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas,