کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555279 998839 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering
چکیده انگلیسی
We report on structural characterization of AlGaN/GaN superlattices grown on sapphire. The superlattice formation is evidenced by high-resolution x-ray diffraction and transmission electron microscopy. The high resolution x-ray diffraction spectra exhibit a pattern of satellite peaks. The in-plane lattice constants of the superlattices indicate the coherent growth of the AlGaN layer onto GaN. The average Al composition in the superlattices is determined to be 0.08 by Rutherford backscattering spectroscopy. The average parallel and perpendicular elastic strains for the SLs are determined to be 〈e∥〉=+0.25% and 〈e⊥〉=−0.17%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 40, Issue 3, September 2006, Pages 137-143
نویسندگان
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