Using nanoindentation and cathodoluminescence to investigate the residual stress of ZnSe

• We explored CL mapping of nanoindentation-induced cracks and stress interactions of ZnSe.
• Residual stress as LR was 10 mN/min was greater than that at 2 mN/min, as error depth was 3.78%.
• CL emission was suppressed due to defects that played roles as nonradiative recombination centers.

In this study we examined the effects of the nanoindentation-induced residual stress of single-crystalline zinc selenide (ZnSe). We employed the nanoindentation technique to evaluate the dislocation mobility of ZnSe at loading ratios of 10 and 2 mN/min, with a holding time of 120 s under a constant load. We visualized the resultant dislocation and microcracks using cathodoluminescence (CL) spectroscopy and mapping to compare the nanoindentation-induced residual stresses of the various ZnSe samples. CL mapping revealed massive dislocation activities during the loading process. The dislocations played roles as nonradiative recombination centers that quenched the local CL intensity. Transmission electron microscopy also revealed the effects of nanoindentation-induced residual stress. To obtain insight into the influence of the residual stress and to determine the dislocation mobilities for ZnSe films, it was essential to monitor the quenching effect of nonradiative recombination centers as a function of CL mapping.