Measurement of residual stress of PZT thin film on Si(1 0 0) by synchrotron X-ray rocking curve technique

(l 0 0) oriented Pb(Zr,Ti)O3 (PZT) and LaNiO3 (LNO) thin films were grown on SiO2/(1 0 0) Si substrate by pulsed laser deposition. The bending of the crystal planes of single crystal substrates is assessed by high-resolution X-ray rocking curve technique (HRRC) with a high quality monochromatic and high intensity synchrotron radiation. The residual stress is then calculated from the change in curvature of the substrate before and after depositing the film based on the well-known modified Stoney's equation. More reliable results can be achieved because they are not affected by surface morphology and reflectivity of the films. HRRC can be applied to all kinds of thin films including randomly oriented polycrystalline, oriented and amorphous films. The residual stress of the (l 0 0) PZT thin films on SiO2/(1 0 0) silicon substrate was measured to be 189 MPa.