کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1790231 | 1524420 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the microstructure of homoepitaxial N-polar GaN layers grown by rf-plasma-assisted molecular beam epitaxy on freestanding GaN substrates. The structural quality of the epitaxial layers improves when the sheet density of oxygen present on the substrate surface diminishes. An initial sheet density of oxygen of ~0.5 monolayer (ML) results in a highly defective epitaxial layer, while an epitaxial layer with no visible threading dislocations was grown on a substrate with an initial oxygen sheet density of ~0.08Â ML. The significant reduction in oxygen was achieved by using several cycles of Ga deposition and thermal desorption prior to the start of epitaxial growth combined with an initial ultrathin 15-Ã
AlN nucleation layer. These results indicate that reducing the density of oxygen on the surfaces of freestanding N-polar GaN substrates is vital for obtaining high quality homoepitaxial N-polar GaN layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 409, 1 January 2015, Pages 14-17
Journal: Journal of Crystal Growth - Volume 409, 1 January 2015, Pages 14-17
نویسندگان
D.F. Storm, T. McConkie, D.S. Katzer, B.P. Downey, M.T. Hardy, D.J. Meyer, David J. Smith,